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General Information
    • ISSN: 2010-3697
    • Frequency: Bimonthly
    • DOI: 10.7763/IJMO
    • Editor-in-Chief: Prof. Adrian Olaru
    • Executive Editor: Ms.Yoyo Y. Zhou
    • Abstracting/ Indexing: Engineering & Technology Digital Library, ProQuest, Crossref, Electronic Journals Library, Google Scholar, EI (INSPEC, IET).
    • E-mail ijmo@iacsitp.com
Editor-in-chief
Prof. Adrian Olaru
University Politehnica of Bucharest, Romania
I'm happy to take on the position of editor in chief of IJMO. It's a journal that shows promise of becoming a recognized journal in the area of modelling and optimization. I'll work together with the editors to help it progress.
IJMO 2013 Vol.3(3): 266-271 ISSN: 2010-3697
DOI: 10.7763/IJMO.2013.V3.279

Modeling of Short Channel MOSFET Devices and Analysis of Design Aspects for Power Optimisation

Kiran Agarwal Gupta, Dinesh K. Anvekar, and Venkateswarlu V.
Abstract—The advancement in silicon material processes technology in the manufacture of 45nm MOSFET has extended Moore’s Law for some more years. Low power CMOS circuit design has become a challenge due to variations in design parameters caused as a result of short channel effects at deep submicron levels for technology nodes below 1μm. In this paper, we have analyzed the design aspects for short channel devices by method of transistor modeling and further simulations have been carried out using Virtuoso cadence Simulator. The technology nodes considered here are 180nm and 45nm technology since fabrication of 180nm uses conventional process technology and 45nm uses new innovations in process technology. The aim of this paper is to bring out parameter variability issues related to different process technologies and find solutions for power optimization at design level for CMOS circuits.

Index Terms—Short channel effects, CMOS, technology node; Threshold variation, low power, scaling

Kiran Agarwal Gupta is with Dayananda Sagar College of Engineering in the dept. of E&C as Associate Professor.Bangalore-560078, India.(e-mail:jpkiran9@gmail.com, g.kiran@ieee.org).
Dinesh Anvekar is with Honeywell Technology Solution Labs as Six Sigma Specialist for Research and Innovations Bangalore-560078, India (e-mail: Dinesh.Anvekar@honeywell.com).
V. Venkateswarlu is with United Technologies Limited working as professor and Principal of VTU Extension Centre.Bangalore-560022, India (e-mail:vwarlu@utltraining.com)

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Cite:Kiran Agarwal Gupta, Dinesh K. Anvekar, and Venkateswarlu V., "Modeling of Short Channel MOSFET Devices and Analysis of Design Aspects for Power Optimisation," International Journal of Modeling and Optimization vol. 3, no. 3, pp. 266-271, 2013.

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