doi: 10.7763/IJMO.2023.V13.818
Device Model Extending from -40℃ to -55℃ Based on Evolutionary Strategy
Tengteng Lu
1,*
,
,
,
- 1 Department of Research, Anhui Siliepoch Technology Co., Ltd, Hefei, China
- 2 38 Institutes of China Electronics Technology Group, Hefei, China
Abstract
At design time, engineers want to simulate circuits at -55 ℃.However, the value temperature of some device models provided by PDKs (process design kit) is as low as -40 ℃. Simulating circuits at -55 ℃ with models will cause a certain deviation. In this paper, we propose the method to extend MOSFET (metal oxide semiconductor field effect transistor) model from -40 ℃ to -55 ℃ based on evolutionary strategy. IDS at threshold voltages (Vth) and maximum IDS of linear and saturation regions were acquired by simulating the MOSFET with a certain size under the PDK’s useful temperature range. Then, we fitted data and obtained threshold voltages and maximum IDS values corresponding to -55 ℃. We used the evolutionary strategy algorithm to adjust some device model parameters so that simulated IDS values are close to the respective fitting values. The fitness is the sum of the relative error of four values and becomes about 1/6 of the original value for the 1.8 V NMOS (N-Channel Metal-Oxide-Semiconductor) device. This method proposes a new idea to extend model temperature, which is beneficial to engineers’ work.
Keywords
- MOSFET
- device model
- optimization
- evolutionary strategy
How to Cite
Tengteng Lu, Jinzhong Sun, Dong Li, and Xiao Mo, "Device Model Extending from -40℃ to -55℃ Based on Evolutionary Strategy," International Journal of Modeling and Optimization, vol. 13, no. 1, pp. 13-18, 2023. https://doi.org/ 10.7763/IJMO.2023.V13.818
Copyright & License
Copyright © 2023 by the authors. This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).