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General Information
Prof. Adrian Olaru
University Politehnica of Bucharest, Romania
I'm happy to take on the position of editor in chief of IJMO. It's a journal that shows promise of becoming a recognized journal in the area of modelling and optimization. I'll work together with the editors to help it progress.
IJMO 2013 Vol.3(1): 30-35 ISSN: 2010-3697
DOI: 10.7763/IJMO.2013.V3.229

Leakage Modeling and Flat Field Correction Algorithm for CMOS Hyper Spectral Imaging Sensor

Shuyang Liu, Pradip Mainali, Klaas Tackand, and Rudy Lauwereins

Abstract—In hyper spectral imaging applications, the light power reaching the image sensofr is greatly reduced compared to broadband color image sensors. Consequently, some typical algorithms, such as Flat Field Correction (FFC), are not guaranteed anymore to work in the same way as in their normal operation for broadband color imaging. This is caused by transistor leakage which cannot be neglected anymore. In this paper, we propose a mathematical leakage model based on the basic transistor theory to tag the validity of the sensor response. The model has been validated by comparing the simulation results to measurements of the pixel response of a hyper spectral imager. We also demonstrate that this leakage model is able to select the proper training set for a typical FFC algorithm.

Index Terms—Leakage model, transistor leakage, CMOS imager, hyper spectral imaging, flat field correction.

Shuyang Liu and Pradip Mainali are from Katholieke Universiteit Leuven and in collaboration with Interuniversity Micro Electronics Centre (IMEC), Belgium. The corresponding author is Shuyang Liu. (e-mail: shuyang@imec.be, mainali@imec.be).
Klaas Tack and Rudy Lauwereins are with Interuniversity Micro Electronics Centre (IMEC), Belgium (e-mail: tackk@imec.be, rudy.lauwereins@imec.be).


Cite: Shuyang Liu, Pradip Mainali, Klaas Tackand, and Rudy Lauwereins, "Leakage Modeling and Flat Field Correction Algorithm for CMOS Hyper Spectral Imaging Sensor," International Journal of Modeling and Optimization vol. 3, no. 1, pp. 30-35, 2013.

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